Product Summary

The FLL177ME is a L-band medium & high power gaas fet. The FLL177ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. The FLL177ME is assembled in hermetic metal/ceramic package.

Parametrics

FLL177ME absolute maximum ratings: (1)Drain-Source Voltage, VDS: 15V; (2)Gate-Source Voltage, VGS: -5V; (3)Total Power Dissipation, Pt: 7.5W; (4)Storage Temperature, Tstg: -65 to +175℃; (5)Channel Temperature, Tch: 175℃.

Features

FLL177ME features: (1)High Output Power: P1dB=32.5dBm (Typ.); (2)High Gain: G1dB=12.5dB (Typ.); (3)High PAE: ndd=46% (Typ.); (4)Proven Reliability; (5)Hermetically Sealed Package.

Diagrams

FLL177ME block diagram

FLL1200IU-2
FLL1200IU-2

Other


Data Sheet

Negotiable 
FLL1200IU-3
FLL1200IU-3

Other


Data Sheet

Negotiable 
FLL1500IU-2C
FLL1500IU-2C

Other


Data Sheet

Negotiable