(China (Mainland))
Product Summary
The ATF-36077-TRL is an ultra-low-noise Pseudomorphic High Electron Mobility Transistor (PHEMT), packaged in a low parasitic, surface-mountable ceramic package. Properly matched, this transistor will provide typical 12 GHz noise figures of 0.5 dB, or typical 4 GHz noise figures of 0.3 dB. Additionally, the ATF-36077-TRL has very low noise resistance, reducing the sensitivity of noise performance to variations in input impedance match, making the design of broadband low noise amplifiers much easier. The premium sensitivity of the ATF-36077-TRL makes this device the ideal choice for use in the first stage of extremely low noise cascades. The applications of the ATF-36077-TRL include 12 GHz DBS LNB (Low Noise Block), 4 GHz TVRO LNB (Low Noise Block), Ultra-Sensitive Low Noise Amplifiers.
Parametrics
ATF-36077-TRL absolute maximum ratings: (1)Drain-Source Voltage: +3 V; (2)Gate-Source Voltage: -3 V; (3)Gate-Drain Voltage: -3.5 V; (4)Drain Current: Idss mA; (5)Total Power Dissipation: 180 mW; (6)RF Input Power: +10 dBm; (7)Channel Temperature: 150 ℃; (8)Storage Temperature: -65 to 150 ℃.
Features
ATF-36077-TRL features: (1)PHEMT Technology; (2)Ultra-Low Noise Figure: 0.5 dB Typical at 12 GHz, 0.3 dB Typical at 4 GHz; (3)High Associated Gain: 12 dB Typical at 12 GHz, 17 dB Typical at 4 GHz; (4)Low Parasitic Ceramic Microstrip Package; (5)Tape-and-Reel Packing Option Available.
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