MGFC45B3436B

GaAs power FET, impedance-matched, module, -15 V, 78 W

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Price:: US $60.00~90.00 / piece [Get Latest Price]

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	US $60.00~90.00

PartNumber:: MGFC45B3436B

Brand:: MITSUBISHI Electronics - MITSUBISHI | Pack: DIP | D/C: 11+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-10-13

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Part Number:MGFC45B3436B
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Product Summary

The MGFC45B3436B is an internally impedance-matched GaAs power FET which is especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

Parametrics

MGFC45B3436B absolute maximum ratings: (1)Gate to drain voltage: -15 V; (2)Gate to source voltage -10 V; (3)Maximum drain current 10 A; (4)Total power dissipation: 78 W; (5)Channel temperature: 175 deg.C; (6)Storage temperature: -65 / +175 deg.C.

Features

MGFC45B3436B features: (1)Class AB operation; (2)Internally matched to 50(ohm) system; (3)High output power: Po(SAT) = 30W (TYP.) @ f=3.4 - 3.6 GHz; (4)High power gain: GLP = 11 dB (TYP.) @ f=3.4 - 3.6 GHz; (5)Distortion: ACP = -45dBc (TYP.) @ f=3.4 - 3.6 GHz.