Product Summary

The FLM7785-6F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.

Parametrics

FLM7785-6F absolute maximum ratings: (1)Drain-Source Voltage: 15 V; (2)Gate-Source Voltage: -5 V; (3)Total Power Dissipation: 31.2 W; (4)Storage Temperature: -65 to +175 ℃; (5)Channel Temperature: 175 ℃.

Features

FLM7785-6F features: (1)High Output Power: P1dB=38.5dBm(Typ.); (2)High Gain: G1dB=8.5dB(Typ.); (3)High PAE: ηadd=31%(Typ.); (4)Broad Band: 7.7~8.5GHz; (5)Impedance Matched Zin/Zout = 50Ω; (6)Hermetically Sealed.

Diagrams

FLM7785-6F diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FLM7785-6F
FLM7785-6F

Other


Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FLM7179-18F
FLM7179-18F

Other


Data Sheet

Negotiable 
FLM7785-12F
FLM7785-12F

Other


Data Sheet

Negotiable 
FLM7785-4F
FLM7785-4F

Other


Data Sheet

Negotiable 
FLM7785-6F
FLM7785-6F

Other


Data Sheet

Negotiable