Product Summary

The BLF6G27-45 is a 45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.

Parametrics

BLF6G27-45 absolute maximum ratings: (1)drain-source voltage: 65 V; (2)gate-source voltage: -0.5 to +13 V; (3)drain current: 20 A; (4)storage temperature: -65 to +150 ℃; (5)junction temperature: 200 ℃.

Features

BLF6G27-45 features: (1)Qualified up to a maximum VDS operation of 32 V; (2)Integrated ESD protection; (3)Excellent ruggedness; (4)High efficiency; (5)Excellent thermal stability; (6)Designed for broadband operation; (7)Internally matched for ease of use; (8)Low gold plating thickness on leads; (9)Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS).

Diagrams

BLF6G27-45 Simplified outline diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLF6G27-45
BLF6G27-45
NXP Semiconductors
Transistors RF MOSFET Power LDMOS TNS
Data Sheet
Negotiable 
BLF6G27-45,112
BLF6G27-45,112
NXP Semiconductors
Transistors RF MOSFET Power LDMOS TNS
Data Sheet
0-1: $44.67
1-25: $43.20
25-100: $40.36
BLF6G27-45,135
BLF6G27-45,135
NXP Semiconductors
Transistors RF MOSFET Power TRANS WIMAX PWR LDMOS
Data Sheet
0-182: $47.54