(China (Mainland))
Product Summary
The MRF7S19120N is a RF Power Field Effect Transistor. It is designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Parametrics
MRF7S19120N absolute maximum ratings: (1)Drain-Source Voltage: -0.5, +65 Vdc; (2)Gate-Source Voltage: -6.0, +10 Vdc; (3)Operating Voltage: 32, +0 Vdc; (4)Storage Temperature Range: -65 to +150 ℃; (5)Case Operating Temperature: 150 ℃; (6)Operating Junction Temperature: 225 ℃.
Features
MRF7S19120N features: (1)100% PAR Tested for Guaranteed Output Power Capability; (2)Characterized with Series Equivalent Large-Signal Impedance Parameters; (3)Internally Matched for Ease of Use; (4)Integrated ESD Protection; (5)Greater Negative Gate-Source Voltage Range for Improved Class C Operation; (6)Designed for Digital Predistortion Error Correction Systems; (7)225℃ Capable Plastic Package; (8)RoHS Compliant; (9)In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Diagrams
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MRF7S19120NR1 |
Freescale Semiconductor |
Transistors RF MOSFET Power 1990MHZ 36W |
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