(China (Mainland))
Product Summary
The HMC-ALH445 is a GaAs MMIC HEMT self-biased, wideband Low Noise Amplifier die which operates between 18 and 40 GHz. The HMC-ALH445 provides 9 dB of gain, 3.9 dB noise figure at 28 GHz and +12 dBm of output power at 1 dB gain compression while requiring only 45 mA from a single +5V supply. The device is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size. The applications of the HMC-ALH445 are Wideband Communication Systems, Point-to-Point Radios, Point-to-Multi-Point Radios, Military & Space, Test Instrumentation.
Parametrics
HMC-ALH445 absolute maximum ratings: (1)Drain Bias Voltage:+5.5 Vdc; (2)Drain Bias Current:60 mA; (3)RF Input Power:10 dBm; (4)Channel Temperature:180℃; (5)Storage Temperature:-65℃ to +150℃; (6)Operating Temperature:-55℃ to +85℃.
Features
HMC-ALH445 features: (1)Noise Figure: 3.9 dB @ 28 GHz; (2)Gain: 9 dB; (3)P1dB Output Power: +12 dBm @ 28 GHz; (4)Supply Voltage: +5V @ 45 mA; (5)Die Size: 1.6 x 1.6 x 0.1 mm.
Diagrams
| Image | Part No | Mfg | Description |  |
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 HMC-ALH445 |
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Data Sheet |
Negotiable |
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Data Sheet |
Negotiable |
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