(China (Mainland))
Product Summary
The FLM3135-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.
Parametrics
FLM3135-4F absolute maximum ratings: (1)Drain-Source Voltage: 15 V; (2)Gate-Source Voltage: -5 V; (3)Total Power Dissipation: 25 W at TC=25 ℃; (4)Storage Temperature: -65 to +175℃; (5)Channel Temperature: 175 ℃.
Features
FLM3135-4F features: (1)High Output Power: P1dB = 36.5dBm (Typ.); (2)High Gain: G1dB = 12.0dB (Typ.); (3)High PAE: ηdd = 38% (Typ.); (4)Low IM3 = -45dBc@Po = 25.5dBm; (5)Broad Band: 3.1 ~ 3.5GHz; (6)Impedance Matched Zin/Zout = 50Ω; (7)Hermetically Sealed Package.
Diagrams
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 FLM3135-4F |
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Negotiable |
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| Image | Part No | Mfg | Description | |
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FLM3135-4F |
Other |
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Data Sheet |
Negotiable |
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FLM3742-25F |
Other |
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Data Sheet |
Negotiable |
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FLM3742-4F |
Other |
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Negotiable |
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