(China (Mainland))
Product Summary
The FLM0910-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.
Parametrics
FLM0910-4F absolute maximum ratings: (1)Drain-Source Voltage: 15 V; (2)Gate-Source Voltage: -5 V; (3)Total Power Dissipation: 25.0 W at TC=25 ℃; (4)Storage Temperature: -65 to +175℃; (5)Channel Temperature: 175 ℃.
Features
FLM0910-4F features: (1)High Output Power: P1dB = 36.0dBm (Typ.); (2)High Gain: G1dB = 7.5dB (Typ.); (3)High PAE: ηdd = 29% (Typ.); (4)Low IM3 = -46dBc@Po = 25.5dBm; (5)Broad Band: 9.5 ~ 10.5GHz; (6)Impedance Matched Zin/Zout = 50Ω.
Diagrams
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 FLM0910-12F |
Other |
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Data Sheet |
Negotiable |
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FLM010 |
Littelfuse |
Fuses 10 AMP 250V SLO BLO |
Data Sheet |
Negotiable |
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