(China (Mainland))
Product Summary
The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design which offers excellent linearity, ease of matching, and greater consistency in covering the frequency band of 3.5 to 3.7 GHz. This new product is uniquely suited for use in WLL applications as it offers high gain, long term reliability and ease of use.
Parametrics
FLL810IQ-4C absolute maximum ratings: (1)Drain-Source Voltage, VDS: 15V; (2)Gate-Source Voltage, VGS: -5V; (3)Total Power Dissipation, PT: 136W; (4)Storage Temperature, Tstg: -65 to +175℃; (5)Channel Temperature, Tch: +175℃.
Features
FLL810IQ-4C features: (1)Push-Pull Configuration; (2)High Power Output: 80W; (3)High PAE: 45%; (4)Excellent Linearity; (5)Suitable for class AB operation; (6)Hermetically Sealed Package.
Diagrams
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Data Sheet |
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