(China (Mainland))
Product Summary
The FLL300IL-1 is a L-band medium & high power GaAs FET. The FLL300IL-1 Power GaAs FET is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications.
Parametrics
FLL300IL-1 absolute maximum ratings: (1)Drain-Source Voltage VDS: 15V; (2)Gate-Source Voltage VGS: -5V; (3)Total Power Dissipation PT: 100W; (4)Storage Temperature Tstg: -65 to +175℃; (5)Channel Temperature Tch: 175℃.
Features
FLL300IL-1 features: (1)High Output Power: P1dB = 44.5dBm (Typ.); (2)High Gain: G1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2); (3)High PAE: ndd = 44% (Typ.); (4)Proven Reliability; (5)Hermetically Sealed Package.
Diagrams
