Product Summary

The BLF861A is a Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange. The applications of the BLF861A include Communication transmitter applications in the UHF frequency range.

Parametrics

BLF861A absolute maximum ratings: (1)drain-source voltage: 65 V; (2)gate-source voltage: ±15 V; (3)drain current (DC): 18 A; (4)total power dissipation: 318 W at Tmb ≤ 25 ℃; (5)storage temperature: -65 +150 ℃; (6)junction temperature: 200 ℃.

Features

BLF861A features: (1)High power gain; (2)Easy power control; (3)Excellent ruggedness; (4)Designed to withstand abrupt load mismatch errors; (5)Source on underside eliminates DC isolators; reducing common mode inductance; (6)Designed for broadband operation (UHF band); (7)Internal input and output matching for high gain and optimum broadband operation.

Diagrams

BLF861A Simplified outline diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BLF861A
BLF861A

Advanced Semiconductor, Inc.

Transistors RF MOSFET Power RF Transistor

Data Sheet

0-10: $80.73
10-25: $79.20
25-50: $77.40
BLF861A,112
BLF861A,112

NXP Semiconductors

Transistors RF MOSFET Power RF LDMOS 150W UHF

Data Sheet

0-1: $83.95
1-25: $78.08