Product Summary

The BLF645 is an 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. The applications of the BLF645 include Communication transmitter applications in the HF to 1400 MHz frequency range, Industrial applications in the HF to 1400 MHz frequency range.

Parametrics

BLF645 absolute maximum ratings: (1)drain-source voltage: 65 V; (2)gate-source voltage: -0.5 to +11 V; (3)drain current: 32 A; (4)storage temperature: -65 to +150 ℃; (5)junction temperature: 200 ℃.

Features

BLF645 features: (1)CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device: Average output power = 100 W, Power gain = 18 dB, Drain efficiency = 56 %; (2)2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device: Peak envelope load power = 100 W, Power gain = 18 dB, Drain efficiency = 45 %, Intermodulation distortion = -32 dBc.

Diagrams

BLF645 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BLF645,112
BLF645,112

NXP Semiconductors

Transistors RF MOSFET Power TRANSISTOR PWR LDMOS

Data Sheet

0-38: $91.39
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BLF642,112
BLF642,112

NXP Semiconductors

Transistors RF MOSFET Power LDMOS TRANSISTOR

Data Sheet

0-41: $35.98
41-100: $33.62
BLF645,112
BLF645,112

NXP Semiconductors

Transistors RF MOSFET Power TRANSISTOR PWR LDMOS

Data Sheet

0-38: $91.39
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BLF647,112

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