Product Summary

The BLF175 is a Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range. The BLF175 has a 4-lead, SOT123A flange package, with a ceramic cap. All leads are isolated from the flange.

Parametrics

BLF175 absolute maximum ratings: (1)drain-source voltage: 125 V; (2)gate-source voltage: 20 V; (3)DC drain current: 4 A; (4)total power dissipation: 68 W at Tmb ≤ 25 ℃; (5)storage temperature: -65 to +150 ℃; (6)junction temperature: 200 ℃.

Features

BLF175 features: (1)High power gain; (2)Low intermodulation distortion; (3)Easy power control; (4)Good thermal stability; (5)Withstands full load mismatch; (6)Gold metallization ensures excellent reliability.

Diagrams

BLF175 pin configuration diagram

Image Part No Mfg Description Data Sheet Download Pricing
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BLF175
BLF175

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Data Sheet

Negotiable 
BLF175,112
BLF175,112

NXP Semiconductors

Transistors RF MOSFET Power RF DMOS 30W HF-VHF

Data Sheet

0-1: $25.74
1-25: $24.65
25-100: $23.64
100-250: $23.18