(China (Mainland))
Product Summary
The ATN3580-03 of attenuator chip incorporates thin-film resistors on high-resistivity silicon to achieve precision attenuation, tight flatness and excellent return loss to 40 GHz. The design of ATN3580-03 uses a balanced TEE resistive structure to assure broad bandwidth performance. The thin-film technology offers improved power-handling capability in comparison to the traditional thickfilm printed attenuator. All ATN3580-03 attenuator chips are specified for their attenuation at DC. A wafer probe sample test is performed to 40 GHz to assure the flatness specification.
Parametrics
ATN3580-03 absolute maximum ratings: (1)Incident power @ 25 ℃: 1W; (2)Operating temperature: -55 ℃ to +150℃; (3)Storage temperature: -65 ℃ to +150℃.
Features
ATN3580-03 features: (1)Specified flat response to 40 GHz; (2)Return loss > 16 dB to 40 GHz; (3)Available at 1–10, 12, 15, 20, 30 and 40 dB; (4)Power handling to 1 W CW; (5)Rugged thin-film silicon chips; (6)Lead (Pb)-free, RoHS-compliant, and Green.
Diagrams
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 ATN3580-03 |
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ATTENUATOR PAD CHIP 1W 3DB |
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ATN3580 |
Other |
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Negotiable |
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ATN3580-01 |
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ATTENUATOR PAD CHIP 1W 1DB |
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ATN3580-02 |
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ATTENUATOR PAD CHIP 1W 2DB |
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ATN3580-03 |
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ATTENUATOR PAD CHIP 1W 3DB |
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ATN3580-04 |
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ATTENUATOR PAD CHIP 1W 4DB |
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ATN3580-05 |
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ATTENUATOR PAD CHIP 1W 5DB |
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