(China (Mainland))
Product Summary
The BLF888 is a 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W average DVB-T broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness of BLF888 makes it ideal for digital transmitter applications. The applications of the BLF888 include Communication transmitter applications in the UHF band, Industrial applications in the UHF band.
Parametrics
BLF888 absolute maximum ratings: (1)drain-source voltage: 104 V; (2)gate-source voltage: -0.5 to +11 V; (3)storage temperature: -65 to +150 ℃; (4)junction temperature: 200 ℃.
Features
BLF888 features: (1)2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 1.3 A: Peak envelope power load power = 500 W, Power gain = 19dB, Drain efficiency = 46 %, Third order intermodulation distortion = -32 dBc; (2)DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 1.3 A: Average output power = 110 W, Power gain = 19 dB, Drain efficiency = 31 %, Shoulder distance = -31 dBc (4.3 MHz from center frequency); (3)Integrated ESD protection; (4)Excellent ruggedness; (5)High power gain.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 BLF888 |
NXP Semiconductors |
Transistors RF MOSFET Power 500W, 470-860MHz |
Data Sheet |
Negotiable |
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BLF888,112 |
NXP Semiconductors |
Transistors RF MOSFET Power TRANSISTOR RF PWR LDMOS |
Data Sheet |
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BLF888A,112 |
NXP Semiconductors |
Transistors RF MOSFET Power UHF POWER LDMOS TRANSISTOR |
Data Sheet |
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BLF888AS,112 |
NXP Semiconductors |
Transistors RF MOSFET Power UHF POWER LDMOS TRANSISTOR |
Data Sheet |
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BLF888B,112 |
NXP Semiconductors |
Transistors RF MOSFET Power UHF pwr LDMOS transistor |
Data Sheet |
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BLF888BS,112 |
NXP Semiconductors |
Transistors RF MOSFET Power UHF pwr LDMOS transistor |
Data Sheet |
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