(China (Mainland))
Product Summary
The BLF6G38-10 is a 10 W LDMOS power transistor. The applications of the it are RF power amplifiers for base stations and multi carrier applications in the 3400 MHz to 3600 MHz frequency range.
Parametrics
BLF6G38-10 absolute maximum ratings: (1)drain-source voltage:65V; (2)gate-source voltage:-0.5V to +13V; (3)drain current:3.1A; (4)storage temperature:-65℃ to +150℃; (5)junction temperature:200℃.
Features
BLF6G38-10 features: (1)Qualified up to a maximum VDS operation of 32 V; (2)Integrated ESD protection; (3)Excellent ruggedness; (4)High efficiency; (5)Excellent thermal stability; (6)Designed for broadband operation; (7)Internally matched for ease of use; (8)Low gold plating thickness on leads; (9)Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances(RoHS); (10)Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and an IDq of 130 mA.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 BLF6G38-10 |
NXP Semiconductors |
Transistors RF MOSFET Power LDMOS TNS |
Data Sheet |
Negotiable |
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BLF6G38-10 /T3 |
NXP Semiconductors |
Transistors RF MOSFET Power LDMOS TNS |
Data Sheet |
Negotiable |
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BLF6G38-10,112 |
NXP Semiconductors |
Transistors RF MOSFET Power LDMOS TNS |
Data Sheet |
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BLF6G38-10,118 |
NXP Semiconductors |
Transistors RF MOSFET Power LDMOS TNS |
Data Sheet |
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BLF6G38-100,112 |
NXP Semiconductors |
Transistors RF MOSFET Power Trans MOSFET N-CH 65V 34A 3-Pin |
Data Sheet |
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BLF6G38-10G |
NXP Semiconductors |
Transistors RF MOSFET Power LDMOS TNS |
Data Sheet |
Negotiable |
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BLF6G38-10G,112 |
NXP Semiconductors |
Transistors RF MOSFET Power LDMOS TNS |
Data Sheet |
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BLF6G38-10G,118 |
NXP Semiconductors |
Transistors RF MOSFET Power LDMOS TNS |
Data Sheet |
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